ALD: Difference between revisions

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117 bytes removed ,  1 December 2021
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(Created page with "{| class="wikitable" |+Unaxis 790 RIE |- ! User !! Date !! Recipe !! Material !! Thickness !! Time !! Etch Rate !Comments |- | Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s |...")
 
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{| class="wikitable"
|+Fiji ALD
|+Unaxis 790 RIE
|-
! User !! Date !! Recipe !! Material !! Nominal Thickness !! Time !! Etch Rate
!Measured Thickness
!Comments
|-
| Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s || 80 nm/m
|
|-
|MF
|108/2723/21
|NbN 350C - Plasma - Bubble - Plasma Clean
|NbEtch
|NbN
|Nb on junctions
|40 nm
|90
|195 s
|
|
|-
| MF || 11/17/21 || NbN 350C - Plasma - Bubble - Plasma Clean || NbN || 40 nm
|JS
|39-43 nm
|11/10/21
|4 tips chip, PtIr STM tip in holder (masked to electrically isolate), 5 Si chips
|50_10_10
|PMMA/Neutral Layer/Graphene/SiO2/Si
|
|10
|N/A Descum
|
|-
|MF
|11/22/21
|NbEtch
|Nb wire
|
|100 minutes
|
|4 wires in Mo holder
|-
|MF
|12/1/21
|50CHF3
|SiO2
|<200nm
|11.75 minutes
|
|Test sample for PECVD dep rate
|-
|}
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