RIE
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| User | Date | Recipe | Material | Thickness | Time | Etch Rate | Comments |
|---|---|---|---|---|---|---|---|
| Ex | 04/02/19 | NbEtch | Nb | 40nm | 30 s | 80 nm/m | |
| MF | 10/27/21 | NbEtch | Nb on junctions | 90 | 195 s | ||
| JS | 11/10/21 | 50_10_10 | PMMA/Neutral Layer/Graphene/SiO2/Si | 10 | N/A Descum | ||
| MF | 11/22/21 | NbEtch | Nb wire | 100 minutes | 4 wires in Mo holder | ||
| MF | 12/1/21 | 50CHF3 | SiO2 | <200nm | 11.75 minutes | Test sample for PECVD dep rate |