ALD: Difference between revisions

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273 bytes added ,  2 December 2021
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(Created page with "{| class="wikitable" |+Unaxis 790 RIE |- ! User !! Date !! Recipe !! Material !! Thickness !! Time !! Etch Rate !Comments |- | Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s |...")
 
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{| class="wikitable"
|+Fiji ALD
|+Unaxis 790 RIE
|-
! User !! Date !! Recipe !! Material !! Nominal Thickness !! Time !! Etch Rate
!Measured Thickness
!Comments
|-
|MF
| Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s || 80 nm/m
|3/22/21
|NbN 300C - Plasma
|NbN
|30 nm
|
|3 Si chips
|-
|MF
|104/277/21
|NbN 300C - Plasma w boost
|NbEtch
|NbN
|Nb on junctions
|40 nm
|90
|195 s
|
|Error in recipe
|-
|JSMF
|117/1021/21
|NbN 300C - Plasma - Bubble - Plasma Clean
|50_10_10
|NbN
|PMMA/Neutral Layer/Graphene/SiO2/Si
|40 nm
|
|10
|N/A Descum
|
|1 W STM tip in holder, 6 Si chips
|-
|MF
|118/2223/21
|NbN 350C - Plasma - Bubble - Plasma Clean
|NbEtch
|NbN
|Nb wire
|40 nm
|
|37,39,41 nm
|100 minutes
|2 W STM tips in holders, 5 Si chips
|
▲|-
|4 wires in Mo holder
| MF || 11/17/21 || NbN 350C - Plasma - Bubble - Plasma Clean || NbN || 40 nm
|39-43 nm
|4 tips chip, PtIr STM tip in holder (masked to electrically isolate), 5 Si chips
|-
|MF
|12/12/21
|NbN 350C - Plasma - Bubble - Plasma Clean
|50CHF3
|NbN
|SiO2
|40 nm
|<200nm
|11.75 minutes
|
|2 13x13mm Si chips, etc.
|Test sample for PECVD dep rate
|-
|}
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