ALD

From brarlab
Revision as of 21:39, 1 December 2021 by Mfortman2 (talk | contribs) (Created page with "{| class="wikitable" |+Unaxis 790 RIE |- ! User !! Date !! Recipe !! Material !! Thickness !! Time !! Etch Rate !Comments |- | Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s |...")
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search
Unaxis 790 RIE
User Date Recipe Material Thickness Time Etch Rate Comments
Ex 04/02/19 NbEtch Nb 40nm 30 s 80 nm/m
MF 10/27/21 NbEtch Nb on junctions 90 195 s
JS 11/10/21 50_10_10 PMMA/Neutral Layer/Graphene/SiO2/Si 10 N/A Descum
MF 11/22/21 NbEtch Nb wire 100 minutes 4 wires in Mo holder
MF 12/1/21 50CHF3 SiO2 <200nm 11.75 minutes Test sample for PECVD dep rate
Retrieved from "https://wiki.physics.wisc.edu/brarlab/index.php?title=ALD&oldid=38"