PECVD: Difference between revisions

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(Created page with "{| class="wikitable" |+Unaxis 790 RIE |- ! User !! Date !! Recipe !! Material !! Thickness !! Time !! Etch Rate !Comments |- | Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s |...")
 
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{| class="wikitable"
{| class="wikitable"
|+Plasma-Therm 70 Series
|+Unaxis 790 RIE
|-
|-
! User !! Date !! Recipe !! Material !! Thickness !! Time !! Etch Rate
! User !! Date !! Recipe !! Material
!Time !! Nominal Thickness (nm) !! Measured Thickness (nm) !! Deposition rate
!Comments
!Comments
|-
| Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s || 80 nm/m
|
|-
|-
|MF
|MF
|10/27/21
|11/23/21
|SiOxide2
|NbEtch
|SiO2
|Nb on junctions
|333 seconds
|90
|200nm
|195 s
|190 nm
|
|.57 nm/s
|
|20211122 test sample to determine dep rate
|-
|JS
|11/10/21
|50_10_10
|PMMA/Neutral Layer/Graphene/SiO2/Si
|
|10
|N/A Descum
|
|-
|-
|MF
|MF
|11/22/21
|12/6/21
|SiOxide2
|NbEtch
|SiO2
|Nb wire
|350 seconds
|200nm
|
|
|100 minutes
|
|4 wires in Mo holder
|-
|MF
|12/1/21
|50CHF3
|SiO2
|<200nm
|11.75 minutes
|
|
|Test sample for PECVD dep rate
|20210922A sample for Nb junctions
|-
|-
|}
|}

Latest revision as of 16:00, 6 December 2021

Plasma-Therm 70 Series
User Date Recipe Material Time Nominal Thickness (nm) Measured Thickness (nm) Deposition rate Comments
MF 11/23/21 SiOxide2 SiO2 333 seconds 200nm 190 nm .57 nm/s 20211122 test sample to determine dep rate
MF 12/6/21 SiOxide2 SiO2 350 seconds 200nm 20210922A sample for Nb junctions