RIE: Difference between revisions
Jump to navigation
Jump to search
(Created page with "{| class="wikitable" |+ Caption text |- ! User !! Date !! Recipe !! Material !! Thickness !! Time !! Etch Rate |- | Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 secs || 80 nm/...") |
No edit summary |
||
| (3 intermediate revisions by 2 users not shown) | |||
| Line 1: | Line 1: | ||
{| class="wikitable" |
{| class="wikitable" |
||
|+Unaxis 790 RIE |
|||
|+ Caption text |
|||
|- |
|- |
||
! User !! Date !! Recipe !! Material !! Thickness !! Time !! Etch Rate |
! User !! Date !! Recipe !! Material !! Thickness !! Time !! Etch Rate |
||
!Comments |
|||
|- |
|- |
||
| Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 |
| Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s || 80 nm/m |
||
| |
|||
|- |
|||
|MF |
|||
|10/27/21 |
|||
|NbEtch |
|||
|Nb on junctions |
|||
|90 |
|||
|195 s |
|||
| |
|||
| |
|||
|- |
|||
|JS |
|||
|11/10/21 |
|||
|50_10_10 |
|||
|PMMA/Neutral Layer/Graphene/SiO2/Si |
|||
| |
|||
|10 |
|||
|N/A Descum |
|||
| |
|||
|- |
|||
|MF |
|||
|11/22/21 |
|||
|NbEtch |
|||
|Nb wire |
|||
| |
|||
|100 minutes |
|||
| |
|||
|4 wires in Mo holder |
|||
|- |
|||
|MF |
|||
|12/1/21 |
|||
|50CHF3 |
|||
|SiO2 |
|||
|<200nm |
|||
|11.75 minutes |
|||
| |
|||
|Test sample for PECVD dep rate |
|||
|- |
|- |
||
|} |
|} |
||
Latest revision as of 21:16, 1 December 2021
| User | Date | Recipe | Material | Thickness | Time | Etch Rate | Comments |
|---|---|---|---|---|---|---|---|
| Ex | 04/02/19 | NbEtch | Nb | 40nm | 30 s | 80 nm/m | |
| MF | 10/27/21 | NbEtch | Nb on junctions | 90 | 195 s | ||
| JS | 11/10/21 | 50_10_10 | PMMA/Neutral Layer/Graphene/SiO2/Si | 10 | N/A Descum | ||
| MF | 11/22/21 | NbEtch | Nb wire | 100 minutes | 4 wires in Mo holder | ||
| MF | 12/1/21 | 50CHF3 | SiO2 | <200nm | 11.75 minutes | Test sample for PECVD dep rate |