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(Created page with "{| class="wikitable" |+Unaxis 790 RIE |- ! User !! Date !! Recipe !! Material !! Thickness !! Time !! Etch Rate !Comments |- | Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s |...") |
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|+Fiji ALD |
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|+Unaxis 790 RIE |
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! User !! Date !! Recipe !! Material !! Thickness |
! User !! Date !! Recipe !! Material !! Nominal Thickness |
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!Measured Thickness |
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!Comments |
!Comments |
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|MF |
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| Ex || 04/02/19 || NbEtch || Nb || 40nm || 30 s || 80 nm/m |
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|3/22/21 |
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|NbN 300C - Plasma |
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|NbN |
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|30 nm |
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|3 Si chips |
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|MF |
|MF |
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|4/7/21 |
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|NbN 300C - Plasma w boost |
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|NbEtch |
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|NbN |
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|Nb on junctions |
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|40 nm |
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|90 |
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|195 s |
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|Error in recipe |
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|MF |
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|7/21/21 |
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|NbN 300C - Plasma - Bubble - Plasma Clean |
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|50_10_10 |
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|NbN |
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|PMMA/Neutral Layer/Graphene/SiO2/Si |
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|40 nm |
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|10 |
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|N/A Descum |
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|1 W STM tip in holder, 6 Si chips |
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|MF |
|MF |
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|8/23/21 |
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|NbN 350C - Plasma - Bubble - Plasma Clean |
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|NbEtch |
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|NbN |
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|Nb wire |
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|40 nm |
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|37,39,41 nm |
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|100 minutes |
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|2 W STM tips in holders, 5 Si chips |
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| ⚫ | |||
|4 wires in Mo holder |
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| MF || 11/17/21 || NbN 350C - Plasma - Bubble - Plasma Clean || NbN || 40 nm |
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|39-43 nm |
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|4 tips chip, PtIr STM tip in holder (masked to electrically isolate), 5 Si chips |
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|MF |
|MF |
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|12/ |
|12/2/21 |
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|NbN 350C - Plasma - Bubble - Plasma Clean |
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|50CHF3 |
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|NbN |
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|SiO2 |
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|40 nm |
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|<200nm |
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|11.75 minutes |
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|2 13x13mm Si chips, etc. |
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|Test sample for PECVD dep rate |
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Latest revision as of 21:35, 2 December 2021
| User | Date | Recipe | Material | Nominal Thickness | Measured Thickness | Comments |
|---|---|---|---|---|---|---|
| MF | 3/22/21 | NbN 300C - Plasma | NbN | 30 nm | 3 Si chips | |
| MF | 4/7/21 | NbN 300C - Plasma w boost | NbN | 40 nm | Error in recipe | |
| MF | 7/21/21 | NbN 300C - Plasma - Bubble - Plasma Clean | NbN | 40 nm | 1 W STM tip in holder, 6 Si chips | |
| MF | 8/23/21 | NbN 350C - Plasma - Bubble - Plasma Clean | NbN | 40 nm | 37,39,41 nm | 2 W STM tips in holders, 5 Si chips |
| MF | 11/17/21 | NbN 350C - Plasma - Bubble - Plasma Clean | NbN | 40 nm | 39-43 nm | 4 tips chip, PtIr STM tip in holder (masked to electrically isolate), 5 Si chips |
| MF | 12/2/21 | NbN 350C - Plasma - Bubble - Plasma Clean | NbN | 40 nm | 2 13x13mm Si chips, etc. |